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U9120 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer U9120
Beschreibung Advanced Power MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 7 Seiten
U9120 Datasheet, Funktion
Advanced Power MOSFET
SFR/U9120
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
n Lower RDS(ON) : 0.444 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
O2
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BVDSS = -100 V
RDS(on) = 0.6
ID = -4.9 A
D-PAK I-PAK
2
11
3
2
3
1. Gate 2. Drain 3. Source
Value
-100
-4.9
-3.4
-20
±30
144
-4.9
3.2
-6.5
2.5
32
0.26
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
Junction-to-Case
--
RθJA
Junction-to-Ambient *
--
RθJA Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.91
50
110
Units
oC/W
Rev. C






U9120 Datasheet, Funktion
SFR/U9120
P-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Compliment of DUT
(N-Channel)
• dv/dt controlled by “RG
• IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D
=
--G--a-t-e--P--u--l-s-e--W---i-d-t-h----
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
Vf
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD

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