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Teilenummer | U9014 |
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Beschreibung | Advanced Power MOSFET | |
Hersteller | Fairchild Semiconductor | |
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Gesamt 7 Seiten Advanced Power MOSFET
SFR/U9014
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V
n Lower RDS(ON) : 0.362 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC)
Continuous Drain Current (TC=100oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
O2
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25oC) *
Total Power Dissipation (TC=25oC)
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
BVDSS = -60 V
RDS(on) = 0.5 Ω
ID = -5.3 A
D-PAK I-PAK
2
11
3
2
3
1. Gate 2. Drain 3. Source
Value
-60
-5.3
-3.7
21
±30
120
-5.3
2.4
-5.5
2.5
24
0.19
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/oC
oC
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
Junction-to-Case
--
RθJA
Junction-to-Ambient *
--
RθJA Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
5.21
50
110
Units
oC/W
Rev. C
SFR/U9014
P-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Compliment of DUT
(N-Channel)
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D
=
--G--a-t-e--P--u--l-s-e--W---i-d-t-h----
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
di/dt
IFM , Body Diode Forward Current
Vf
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ U9014 Schematic.PDF ] |
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