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TYN808RG Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer TYN808RG
Beschreibung 8A SCRs
Hersteller STMicroelectronics
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Gesamt 9 Seiten
TYN808RG Datasheet, Funktion
®
SENSITIVE & STANDARD
TN8, TS8 and TYNx08 Series
8A SCRs
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
Value
8
600 to 1000
Unit
A
V
A
G
K
A
A
IGT
0.2 to 15
mA
DESCRIPTION
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8A SCR
series is suitable to fit all modes of control, found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
ABSOLUTE RATINGS (limiting values)
KA
G
DPAK
(TS8-B)
(TN8-B)
A
K
AG
TO-220AB
(TS8-T)
KA
G
IPAK
(TS8-H)
(TN8-H)
A
K
A
G
TO-220AB
(TYNx)
Symbol
Parameter
Value
Unit
IT(RMS)
IT(AV)
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
Non repetitive surge peak on-state
current
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage (for TN8 & TYN only)
Tc = 110°C
8
Tc = 110°C
5
Tj = 25°C
TS8/TN8 TYN
73 100
70 95
Tj = 25°C
24.5 45
A
A
A
A2S
Tj = 125°C
50
A/µs
Tj = 125°C
Tj = 125°C
4
1
- 40 to + 150
- 40 to + 125
5
A
W
°C
V
April 2002 - Ed: 4A
1/9






TYN808RG Datasheet, Funktion
TN8, TS8 and TYNx08 Series
Fig. 8: Surge peak on-state current versus
number of cycles. TS8/TN8/TYN.
ITSM(A)
100
90
80 TYN
tp = 10ms
70
Non repetitiv e
One cycle
60 Tj initial = 25 °C
50 TS8/TN8
40
30 Repetitive
20 Tcase = 110 °C
10 Number of cycles
0
1 10
100 1000
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
50.0
10.0
Tj max.:
Vto = 0.85V
Rd = 46m
Tj = Tj max.
1.0
Tj = 25°C
VTM(V)
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
ITSM(A),I2t(A2s)
1000
Tj initial = 25°C
100
10
0.01
dI/dt
limitattion
ITSM
TYN
TS8/TN8
0.10
I2t
tp(ms)
TYN
TS8/TN8
1.00
10.00
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)
(DPAK).
Rth(j-a) ( °C/W)
100
80
60
40
20
S(cm2)
0
0 2 4 6 8 10 12 14 16 18 20
6/9

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