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PDF VHB50-28S Data sheet ( Hoja de datos )
| Número de pieza | VHB50-28S | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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VHB50-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB50-28S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 6.5 A
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
TJ
TSTG
θJC
75 W
-65 OC to +200 OC
-65 OC to +150 OC
2.3 OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
ØC
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .980 / 24.89
C .370 / 9.40
D .004 / 0.10
E .320 / 8.13
F .100 / 2.54
G .450 / 11.43
H .090 / 2.29
I .155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10730
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
MINIMUM
BVCEO
IC = 200 mA
35
BVCES
IC = 200 mA
65
BVEBO
IE = 10 mA
4.0
ICBO
ICES
VCB = 28 V
VCE = 28 V
TC = 125 OC
hFE VCE = 5.0 V
IC = 500 mA
5.0
TYPICAL
MAXIMUM
2.0
10
---
UNITS
V
V
V
mA
mA
---
Cob VCB = 28 V
f = 1.0 MHz
80 pF
fT VCE = 10 V
PG VCE = 28 V
ηC
IC = 500 mA
POUT = 50 W
f = 100 MHz
f = 150 MHz
200
6.0
60
MHz
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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