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PDF VN0606 Data sheet ( Hoja de datos )
| Número de pieza | VN0606 | |
| Descripción | N-Channel Enhancement-Mode Vertical DMOS FETs | |
| Fabricantes | Supertex Inc | |
| Logotipo |  |
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VN0606
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► High input impedance and high gain
Applications
► Motor controls
► Converters
► Amplifiers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven, silicon-
gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Device
Package Options
TO-92
VN0606
VN0606L-G
-G indicates package is RoHS compliant (‘Green’)
BVDSS/BVDGS
(V)
60
RDS(ON)
(max)
(Ω)
3.0
Pin Configurations
ID(ON)
(min)
(A)
1.5
Absolute Maximum Ratings
SOURCE
DRAIN
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±30V
GATE
TO-92 (L)
Product Marking
Operating and storage temperature -55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level may
affect device reliability. All voltages are referenced to device ground.
Si VN YY = Year Sealed
0 6 0 6 L WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (L)
* Distance of 1.6mm from case for 10 seconds.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet VN0606.PDF ] | |
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