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Teilenummer | VMB70-12S |
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Beschreibung | NPN SILICON RF POWER TRANSISTOR | |
Hersteller | Advanced Semiconductor | |
Logo | ||
Gesamt 1 Seiten VMB70-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB70-12S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 12 A
VCBO
36 V
VCEO
18 V
VEBO
PDISS
TJ
TSTG
θJC
3.5 V
183 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.05 OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
ØC
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .980 / 24.89
C .370 / 9.40
D .004 / 0.10
E .320 / 8.13
F .100 / 2.54
G .450 / 11.43
H .090 / 2.29
I .155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10746
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 50 mA
BVCES
IC = 100 mA
BVCEO
IC = 50 mA
BVEBO
IE = 10 mA
ICES VE = 12.5 V
hFE VCE = 5.0 V
IC =5.0 A
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
10
10 ---
UNITS
V
V
V
V
mA
---
COB VCB = 12.5 V
MHz
f = 1.0
270 pF
PG
ηC
VCC = 12.5 V
POUT = 70 W
f = 88 MHz
7.0
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ VMB70-12S Schematic.PDF ] |
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