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VMB10-12F Schematic ( PDF Datasheet ) - Advanced Semiconductor

Teilenummer VMB10-12F
Beschreibung NPN SILICON RF POWER TRANSISTOR
Hersteller Advanced Semiconductor
Logo Advanced Semiconductor Logo 




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VMB10-12F Datasheet, Funktion
VMB10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VMB10-12F is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 2.0 A
VCBO
36 V
VCEO
18 V
VCES
36 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
20 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
5.0 OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10741
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCES
IC = 50 mA
BVCEO
IC = 15 mA
BVEBO
IE = 2.5 mA
ICBO
VCB = 12.5 V
hFE VCE = 5.0 V
IC = 250 mA
MINIMUM TYPICAL MAXIMUM
36
18
4.0
1.0
5.0 200
UNITS
V
V
V
mA
---
COB VCB = 12.5 V
f = 1.0 MHz
65 pF
PG
VCC = 12.5 V
POUT = 10 W
f = 88 MHz
13
ηC
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1





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