(PDF) XSD56120 Datasheet - RF POWER TRANSISTORS RF POWER TRANSISTORS

Número de pieza	XSD56120
Descripción	RF POWER TRANSISTORS RF POWER TRANSISTORS
Fabricantes	STMicroelectronics
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No Preview Available ! ® SD56120 RF POWER TRANSISTORS The LdmoST FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s EXCELLENT THERMAL STABILITY s COMMON SOURCE CONFIGURATION, PUSH-PULL s POUT = 100 W PEP WITH 13 dB GAIN @ 860 MHz s BeO FREE PACKAGE DESCRIPTION The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. M246 epoxy sealed ORDER CODE SD56120 BRANDING XSD56120 PIN CONNECTION ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc= 70oC) Max. Operating Junction Temperature Storage Temperature THERMAL DATA Rth(j-c) Junction-Case Thermal Resistance 1. Drain 2. Drain 3. Source 4. Gate 5. Gate Value 65 ± 20 14 260 200 -65 to 150 Unit V V A W oC oC 0.5 oC/W November 1999 1/4 1 page

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PDF XSD56120 Data sheet ( Hoja de datos )