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Teilenummer | XR-85 |
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Beschreibung | SILICON EPITAXIAL PLANAR SWITCHING DIODE | |
Hersteller | Shanghai Sunrise Electronics | |
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Gesamt 1 Seiten SHANGHAI SUNRISE ELECTRONICS CO., LTD.
XR-85
SILICON EPITAXIAL
PLANAR SWITCHING DIODE
REVERSE VOLTAGE: 20V
FORWARD CURRENT: 100mA
TECHNICAL
SPECIFICATION
FEATURES
• Small glass structure ensures high reliability
• Low leakage
• High temperature soldering guaranteed:
250oC/10S/9.5mm lead length
at 5 lbs tension
DO - 34
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL
VALUE
Reverse Voltage
VR 20
Peak Reverse Voltage
VRM 35
Forward Current (average)
Forward Voltage (IF=10mA)
Reverse Current (VR=20V)
Reverse Current (VR=20V,TJ=100oC)
Capacitance
(Note 1)
Forward Differential Resistor (IF=10mA, f=100MHz)
Thermal Resistance
(junction to ambient)
(Note 2)
IO
VF
IR1
IR2
Ct
rF
Rθ(ja)
100
1
100
10
1.5
0.6
0.35
Operating Junction and Storage Temperature Range
TSTG,TJ
-55 ~ +150
Notes:
1: VR=10V, f=1 MHz
2: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
UNITS
V
V
mA
V
nA
µA
pF
Ω
oC/mW
oC
http://www.sse-diode.com
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ XR-85 Schematic.PDF ] |
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