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PDF XP132A1275SR Data sheet ( Hoja de datos )

Número de pieza XP132A1275SR
Descripción Power MOS FET
Fabricantes Torex Semiconductor 
Logotipo Torex Semiconductor Logotipo



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No Preview Available ! XP132A1275SR Hoja de datos, Descripción, Manual

P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.075(max)
Ultra High-Speed Switching
SOP - 8 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
The XP132A1275SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.075( Vgs = -4.5V )
Rds (on) = 0.115( Vgs = -2.5V )
Ultra high-speed switching
Operational Voltage : -2.5V
High density mounting : SOP - 8
Pin Configuration
S1
S2
S3
G4
SOP - 8 Top View
8D
7D
6D
5D
Equivalent Circuit
18
27
36
45
P - Channel MOS FET
( 1 device built-in )
Pin Assignment
PIN NUMBER
1-3
4
5-8
PIN NAME
S
G
D
FUNCTION
Source
Gate
Drain
u
Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
-20
+ 12
-5
-20
-5
2.5
150
-55 to 150
( note ) : When implemented on a glass epoxy PCB
Ta=25OC
UNITS
V
V
A
A
A
W
OC
OC

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