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Composite Transistors
XP0111M
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s Features
q Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 1.25±0.1 0.425
15
2
34
Unit: mm
s Basic Part Number of Element
q UN211M × 2 elements
0.2±0.1
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Rating Collector to base voltage
of Collector to emitter voltage
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
150
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: EK
Internal Connection
Tr1
1
5
2
3
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
*1 Ratio between 2 elements
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
hFE (small/large)*1
VCE(sat)
VOH
VOL
R1
R1/R2
fT
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
VCE = –10V, IC = –5mA
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
min
–50
–50
80
0.5
–4.9
–30%
4
Tr2
typ max Unit
V
V
– 0.1 µA
– 0.5 µA
– 0.2 mA
0.99
2.2
0.047
80
– 0.25
– 0.2
+30%
V
V
V
kΩ
MHz
1