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PDF XN4130 Data sheet ( Hoja de datos )
| Número de pieza | XN4130 | |
| Descripción | Silicon PNP epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN4130
Silicon PNP epitaxial planer transistor
For amplification of low frequency output
s Features
q Two elements incorporated into one package.
(Transistors with built-in resistor)
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q UN1130 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
–15
–15
–7
– 0.5
–1
300
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: OF
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Base to emitter resistance
VCBO
VCEO
VEBO
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
RBE
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –1mA, IC = 0
VCB = –10V, IE = 0
VCE = –2V, IC = –500mA*
VCE = –2V, IC = –1A*
IC = –300mA, IB = –6mA
IC = –300mA, IB = –6mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–15
–15
–7
80
50
–30%
typ max Unit
V
V
V
– 0.1 µA
280
– 0.2 – 0.3
V
– 0.9 –1.3
V
130 MHz
22 pF
10 +30% kΩ
*Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XN4130.PDF ] | |
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