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PDF XN09D57 Data sheet ( Hoja de datos )
| Número de pieza | XN09D57 | |
| Descripción | Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) | |
| Fabricantes | Panasonic Semiconductor | |
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Composite Transistors
XN09D57
Silicon PNP epitaxial planar type (Tr)
Silicon epitaxial planar type (SBD)
For DC-DC converter
0.50+–00..0150
0.30+–00..0150
Unit: mm
0.16+–00..0160
■ Features
• Two elements incorporated into one package (Tr + SBD)
• Reduction of the mounting area and assembly cost by one half
• Low collector-emitter saturation voltage VCE(sat)
■ Basic Part Number
• XN9D57 + MA3XD11
65
4
123
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
Display at No.1 lead
10°
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Tr
Collector-base voltage
VCBO
−15
(Emitter open)
V
Collector-emitter voltage
(Base open)
VCEO
−15
V
Emitter-base voltage
(Collector open)
VEBO
−5
V
SBD
Collector current
Peak collector current
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak
forward surge current
IC
ICP
VR
VRRM
IF(AV)
IFSM
−2.5
−10
20
25
1
2
A
A
V
V
A
A
Overall
Total power dissipation *
Junction temperature
Storage temperature
PT 600 mW
Tj 125 °C
Tstg −55 to +125 °C
Note) *: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr
1: Emitter
2: Base
3: Anode
4: Collector (Cathode)
5: Collector (Cathode)
6: Collector (Cathode)
Mini6-G1 Package
Marking Symbol: EW
Internal Connection
65
4
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
VCBO
VCEO
VEBO
ICBO
hFE1
hFE2
VCE(sat)
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VCE = −2 V, IC = −100 mA
VCE = −2 V, IC = −2.5 A
IC = −1 A, IB = −10 mA
IC = −2.5 A, IB = −50 mA
−15
−15
−5
− 0.1
200 560
100
−140
−270 −320
V
V
V
µA
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: March 2004
SJJ00245CED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet XN09D57.PDF ] | |
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