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PDF IRFD1Z2 Data sheet ( Hoja de datos )
| Número de pieza | IRFD1Z2 | |
| Descripción | 0.4A and 0.5A/ 60V and 100V/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Semiconductor
July 1998
IRFD1Z0, IRFD1Z1,
IRFD1Z2, IRFD1Z3
0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm,
N-Channel Power MOSFETs
Features
• 0.4A and 0.5A, 60V and 100V
• rDS(ON) = 2.4Ω and 3.2Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17451.
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD1Z0
HEXDIP
IRFD1Z0
IRFD1Z1
HEXDIP
IRFD1Z1
IRFD1Z2
HEXDIP
IRFD1Z2
IRFD1Z3
HEXDIP
IRFD1Z3
NOTE: When ordering, use the entire part number.
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2313.1
1 page  
IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
100
VGS = 0V, f = 1MHz
CISS = CGS + CGD
80
CRSS = CGD
COSS = CDS + CGD
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
60
CISS
40
20
00
COSS
CRSS
10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0.6
PULSE DURATION = 80µs
0.5
0.4
0.3
0.2
TJ = -55oC
TJ = 25oC
TJ = 125oC
0.1
0
0
0.25
0.50
0.75
1.0
1.25
1.5
ID, DRAIN CURRENT (A)
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
10
1.0
TJ = 150oC
TJ = 25oC
0.1
0
0.4 0.8 1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 1.2A
15 VDS = 20V
VDS = 50V
VDS = 80V
10 IRFD1Z0,
IRFD1Z2
5
0
01234
QG, TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE VOLTAGE
5-5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRFD1Z2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFD1Z0 | 0.4A and 0.5A/ 60V and 100V/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
| IRFD1Z1 | 0.4A and 0.5A/ 60V and 100V/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
| IRFD1Z2 | 0.4A and 0.5A/ 60V and 100V/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
| IRFD1Z3 | 0.4A and 0.5A/ 60V and 100V/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs | Intersil Corporation |
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