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PDF IRF9130 Data sheet ( Hoja de datos )
| Número de pieza | IRF9130 | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | Seme LAB | |
| Logotipo |  |
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 1. - 100V, 11A, P-Channel MOSFET  Hay una vista previa y un enlace de descarga de IRF9130 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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IRF9130
MECHANICAL DATA
Dimensions in mm (inches)
39.95 (1.573)
max.
30.40 (1.197)
30.15 (1.187)
17.15 (0.675)
16.64 (0.655)
4.09 (0.161)
3.84 (0.151)
dia.
2 plcs.
2
1
20.32 (0.800)
18.80 (0.740)
dia.
1.09 (0.043)
0.97 (0.038)
dia.
2 plcs.
TO–3 Metal Package
Pin 1 – Gate
Pin 2 – Source
Case – Drain
P–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
–100V
–11A
0.2W
FEATURES
• HERMETICALLY SEALED TO–3 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
–11A
ID
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
–7.0A
IDM Pulsed Drain Current 1
–50A
PD Power Dissipation @ Tcase = 25°C
75W
Linear Derating Factor
0.6W/°C
EAS
IAR
EAR
dv/dt
Single Pulse Avalanche Energy 2
Avalanche Current 1
Repetitive Avalanche Energy 1
Peak Diode Recovery 3
81mJ
–11A
7.5mJ
–5.5V/ns
TJ , Tstg
TL
Operating and Storage Temperature Range
Lead Temperature 1.6mm (0.63”) from case for 10 sec.
–55 to +150°C
300°C
Notes
1) Repetitive Rating – Pulse width limited by maximum junction temperature.
2) @ VDD = –25V , L ³ 1.0mH , RG = 25W , Peak IL = –11A , Starting TJ = 25°C
3) @ ISD £ –11A , di/dt £ –140A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.5W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 10/99
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRF9130.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF9130 | P-CHANNEL POWER MOSFETS |  Samsung semiconductor |
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| IRF9130 | TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A) |  International Rectifier |
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