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PDF IRF7476 Data sheet ( Hoja de datos )

Número de pieza IRF7476
Descripción Power MOSFET(Vdss=12V/ Id=15A)
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7476 Hoja de datos, Descripción, Manual

PD - 94311
IRF7476
HEXFET® Power MOSFET
Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
Netcom and Computing Applications.
l Power Management for Netcom,
Computing and Portable Applications.
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
VDSS
12V
RDS(on) max
ID
8.0m@VGS = 4.5V 15A
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation„
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
±12
15
12
120
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through „ are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
04/29/02

1 page




IRF7476 pdf
IRF7476
15
12
9
6
3
0
25 50 75 100 125 150
Tc, Case Temperature (°C° )
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
VDS
VGS
RG
RD
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA + T A
0.1 1
t1, Rectangular Pulse Duration (sec)
10
100 1000
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
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