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IRF3708 Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IRF3708
Beschreibung Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 10 Seiten
IRF3708 Datasheet, Funktion
PD - 93938B
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
VDSS
30V
IRF3708
IRF3708S
IRF3708L
HEXFET® Power MOSFET
RDS(on) max
12m
ID
62A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3708
D2Pak
IRF3708S
TO-262
IRF3708L
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
±12
62
52
248
87
61
0.58
-55 to + 175
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)*
Typ.
–––
0.50
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.73
–––
62
40
Units
V
V
A
W
W
W/°C
°C
Units
°C/W
Notes  through „ are on page 10
www.irf.com
1
8/22/00






IRF3708 Datasheet, Funktion
IRF3708/3708S/3708L
0.025
0.017
0.020
0.015
0.015
VGS = 4.5V
0.010
0.005
0
VGS = 10V
50 100 150 200 250
ID , Drain Current ( A )
300
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
VGS
3mA
D.U.T.
+
-VDS
VGS
QGS
VG
IG ID
Current Sampling Resistors
QG
QGD
Charge
Fig 14a&b. Gate Charge Test Circuit
and Waveform
0.013
0.011
0.009
ID = 31A
0.007
2.0
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
600
ID
TOP
10A
20.7A
480 BOTTOM 24.8A
360
240
V (B R )D SS
tp
IAS
VDS
L
RG
20V
tp
D.U .T
IA S
0.0 1
15V
DRIVER
+
- VD D
A
120
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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