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Teilenummer | IRF1310S |
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Beschreibung | Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=41A) | |
Hersteller | International Rectifier | |
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HEXFET® Power MOSFET
PD - 9.1221
IRF1310S
Advanced Process Technology
Ultra Low On-Resistance
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
175°C Operating Temperature
VDSS = 100V
RDS(on) = 0.04Ω
ID = 41A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
SMD-220
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
41
29
160
170
3.8
1.1
0.025
±20
230
41
17
5.5
-55 to + 175
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Min.
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
––––
––––
––––
––––
––––
––––
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
0.90
40
62
Units
°C/W
To Order
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IRF1310S
10 V
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
600 ID
TOP
10A
18A
500 BOTTOM 25A
400
300
200
100
0 VDD = 50V
25 50
75
100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
To Order
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ IRF1310S Schematic.PDF ] |
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