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Teilenummer | IRF1310N |
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Beschreibung | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 8 Seiten l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 91504A
IRF1310N
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 0.036Ω
ID = 42A
S
TO-220AB
Max.
42
30
140
160
1.1
± 20
420
22
16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.95
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/14/98
IRF1310N
1000
15V
VDS
L
D R IV E R
RG
20V
tp
D .U .T
IA S
0 .0 1Ω
+
- VD D
A
Fig 12a. Unclamped Inductive Test Circuit
800
600
400
200
TOP
BOTTOM
ID
9.0A
16A
22A
V(BR)DSS
tp
0
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (oC)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
10 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ IRF1310N Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
IRF1310LPBF | Power MOSFET ( Transistor ) | International Rectifier |
IRF1310N | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) | International Rectifier |
IRF1310NL | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) | International Rectifier |
IRF1310NLPBF | Power MOSFET ( Transistor ) | International Rectifier |
IRF1310NS | Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) | International Rectifier |
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