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Número de pieza | IRF130 | |
Descripción | 14A/ 100V/ 0.160 Ohm/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF130 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
IRF130
March 1999 File Number 1566.4
14A, 100V, 0.160 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17411.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF130
TO-204AA
IRF130
NOTE: When ordering, use the entire part number.
Features
• 14A, 100V
• rDS(ON) = 0.160Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page IRF130
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1500
1200
1.05
900
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.95
0.85
0.75
-60
0 60 120
TJ, JUNCTION TEMPERATURE (oC)
180
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
600
300 CRSS
CISS
COSS
0
12
5 10 2
5 102
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
VDS 50V
80µs PULSE TEST
8
6
4
TJ = 25oC
TJ = 175oC
2
0
0 5 10 15 20 25
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
103
102
10
TJ = 175oC
1
TJ = 25oC
0.1
0
0.4 0.8
1.2 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
2.0
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 14A
FOR TEST CIRCUIT
16 SEE FIGURE 18
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
0
0 6 12 18 24 30
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF130.PDF ] |
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