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Teilenummer | IRF1010NS |
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Beschreibung | Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 10 Seiten l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low-
profile applications.
G
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
www.irf.com
PD - 94171
IRF1010NS
IRF1010NL
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 11mΩ
ID = 85A
S
D 2 Pak
IRF1010NS
T O -26 2
IRF1010NL
Max.
85
60
290
180
1.2
± 20
43
18
3.6
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
0.85
40
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
02/14/02
IRF1010NS/IRF1010NL
15V
VDS
L
D R IV E R
RG
2V0GVS
tp
D .U .T
IA S
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
500
ID
TOP
18A
30A
400 BOTTOM 43A
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ IRF1010NS Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
IRF1010N | Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A) | International Rectifier |
IRF1010NL | Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) | International Rectifier |
IRF1010NLPBF | Power MOSFET ( Transistor ) | International Rectifier |
IRF1010NPBF | HEXFET Power MOSFET | International Rectifier |
IRF1010NS | Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) | International Rectifier |
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