|
|
Teilenummer | IR2111 |
|
Beschreibung | HALF-BRIDGE DRIVER | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 15 Seiten Data Sheet No. PD60028-M
IR2111(S) & (PbF)
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• Internally set deadtime
• High side output in phase with input
• Also available LEAD-FREE
HALF-BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
200 mA / 420 mA
VOUT
10 - 20V
ton/off (typ.)
750 & 150 ns
Deadtime (typ.)
650 ns
Description
Packages
The IR2111(S) is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels designed for half-
bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized
monolithic construction. Logic input is compatible with
standard CMOS outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Internal deadtime is provided
8-Lead PDIP
to avoid shoot-through in the output half-bridge. The
floating channel can be used to drive an N-channel
power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
8-Lead SOIC
Typical Connection
up to 600V
VCC
VCC
VB
IN IN HO
COM
LO
VS
TO
LOAD
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1
IR2111(S) & (PbF)
1500
1250
1000
750
500
M ax.
T yp.
M in.
250
0
-50 -25
0
25 50 75 100 125
Temperature (oC)
Figure 11A Turn-On Time vs Temperature
400
350
300
250
200
150
100
50
0
-50
-25
Max
Typ
0 25 50 75
Temperature (°C)
100 125
Figure 12A Turn-Off Time vs Temperature
400
350
300
250
200
Max
150
100
Typ
50
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Figure 13A Turn-On RiseTime vs Temperature
6
1500
1250
1000
750
500
Max.
Typ.
Min.
250
0
10 12 14 16 18
V BIA S Supply V oltage (V)
Figure 11B Turn-On Time vs Voltage
400
350
300
250
Max
200
150
Typ
100
50
0
10 12 14 16 18
20
20
VBIAS Supply Voltage (V)
Figure 12B Turn-Off Time vs Voltage
400
350
300
250
200
Max
150
100
Typ
50
0
10
12 14 16 18
V B IA S Supply V oltage (V )
20
Figure 13B Turn-On RiseTime vs Voltage
www.irf.com
6 Page IR2111(S) & (PbF)
150 320
125
100 160
75 30V
50
25
0
1E+2
1E+3 1E+4 1E+5
Frequency (Hz)
1E+6
Figure 31. IR2111 TJ vs. Frequency (IRFBC20)
RGATE = 33Ω, VCC = 15V
320V
150
160V
125
100
30V
75
50
25
0
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
Figure 32. IR2111 TJ vs. Frequency (IRFBC30)
RGATE = 22Ω, VCC = 15V
320V 160V
150
125 30V
100
75
50
25
0
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
Figure33. IR2111 TJ vs. Frequency (IRFBC40)
RGATE = 15Ω, VCC = 15V
150 320V 160V 30V
125
100
75
50
25
0
1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz)
Figure 34. IR2111 TJ vs. Frequency (IRFPC50)
RGATE = 10Ω, VCC = 15V
12 www.irf.com
12 Page | ||
Seiten | Gesamt 15 Seiten | |
PDF Download | [ IR2111 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
IR2110 | HIGH AND LOW SIDE DRIVER | International Rectifier |
IR2110C | (IR2110C / IR2113C) High and Low Side Driver in Die Wafer Form | International Rectifier |
IR2110E6 | HIGH AND LOW SIDE DRIVER | International Rectifier |
IR2110L | HIGH AND LOW SIDE DRIVER | International Rectifier |
IR2110L6 | HIGH AND LOW SIDE DRIVER | International Rectifier |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |