|
|
Teilenummer | IR2105S |
|
Beschreibung | High Voltage/ High Speed Power MOSFET and IGBT Driver | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 12 Seiten Data Sheet No. PD60139J
IR2105
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Internally set deadtime
• High side output in phase with input
• Match propagation delay for both channels
Description
The IR2105 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies en-
able ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates from 10
to 600 volts.
Typical Connection
HALF BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
130 mA / 270 mA
VOUT
10 - 20V
ton/off (typ.)
680 & 150 ns
Deadtime (typ.)
520 ns
Packages
8 Lead PDIP
8 Lead SOIC
up to 600V
VCC
VCC
VB
IN IN HO
COM
LO
VS
TO
LOAD
IR2105
IN
HO
LO
Figure 1. Input/Output Timing Diagram
IN(LO)
IN(HO)
ton
LO
HO
50%
50%
tr
90%
toff tf
90%
10%
10%
Figure 2. Switching Time Waveform Definitions
50%
IN
50%
90%
HO 10%
DT
LO 90%
DT
10%
Figure 3. Deadtime Waveform Definitions
IN (LO)
IN (HO)
50%
50%
LO HO
10%
MT MT
90%
LO HO
Figure 4. Delay Matching Waveform Definitions
6 www.irf.com
6 Page IR2105
500
400
300 Ty p.
200
10 0 Min.
0
-50 -25
0 25 50 75
Temperature (oC)
100 125
Figure 22A. Output Source Current
vs Temperature
700
600
500 Typ.
400
300
M in .
200
100
0
-50
-25
0 25 50 75
Temperature (oC)
100 125
Figure 23A. Output Sink Current
vs Temperature
500
400
300
200
Typ.
100
Min.
0
10
Min.
12 14 16
VBIAS Supply Voltage (V)
18
20
Figure 22B. Output Source Current
vs Voltage
700
600
500
400
Typ.
300
200
Min.
100
0
10
12 14 16 18
VBIAS Supply Voltage (V)
Figure 23B. Output Sink Current
vs Voltage
20
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon, Hong
Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 11/29/99
12 www.irf.com
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ IR2105S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
IR2105 | High Voltage/ High Speed Power MOSFET and IGBT Driver | International Rectifier |
IR2105S | High Voltage/ High Speed Power MOSFET and IGBT Driver | International Rectifier |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |