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IR2105S Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IR2105S
Beschreibung High Voltage/ High Speed Power MOSFET and IGBT Driver
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 12 Seiten
IR2105S Datasheet, Funktion
Data Sheet No. PD60139J
IR2105
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Internally set deadtime
High side output in phase with input
Match propagation delay for both channels
Description
The IR2105 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies en-
able ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates from 10
to 600 volts.
Typical Connection
HALF BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
130 mA / 270 mA
VOUT
10 - 20V
ton/off (typ.)
680 & 150 ns
Deadtime (typ.)
520 ns
Packages
8 Lead PDIP
8 Lead SOIC
up to 600V
VCC
VCC
VB
IN IN HO
COM
LO
VS
TO
LOAD






IR2105S Datasheet, Funktion
IR2105
IN
HO
LO
Figure 1. Input/Output Timing Diagram
IN(LO)
IN(HO)
ton
LO
HO
50%
50%
tr
90%
toff tf
90%
10%
10%
Figure 2. Switching Time Waveform Definitions
50%
IN
50%
90%
HO 10%
DT
LO 90%
DT
10%
Figure 3. Deadtime Waveform Definitions
IN (LO)
IN (HO)
50%
50%
LO HO
10%
MT MT
90%
LO HO
Figure 4. Delay Matching Waveform Definitions
6 www.irf.com

6 Page









IR2105S pdf, datenblatt
IR2105
500
400
300 Ty p.
200
10 0 Min.
0
-50 -25
0 25 50 75
Temperature (oC)
100 125
Figure 22A. Output Source Current
vs Temperature
700
600
500 Typ.
400
300
M in .
200
100
0
-50
-25
0 25 50 75
Temperature (oC)
100 125
Figure 23A. Output Sink Current
vs Temperature
500
400
300
200
Typ.
100
Min.
0
10
Min.
12 14 16
VBIAS Supply Voltage (V)
18
20
Figure 22B. Output Source Current
vs Voltage
700
600
500
400
Typ.
300
200
Min.
100
0
10
12 14 16 18
VBIAS Supply Voltage (V)
Figure 23B. Output Sink Current
vs Voltage
20
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086
IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon, Hong
Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 11/29/99
12 www.irf.com

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