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IR20153S Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IR20153S
Beschreibung HIGH SIDE DRIVER WITH RECHARGE
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 15 Seiten
IR20153S Datasheet, Funktion
Preliminary Data Sheet PD60214 Rev B
IR20153S & (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Features
Product Summary
Floating channel designed for bootstrap operation
Fully operational up to 150V
VOFFSET
150V max.
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 5V to 20V
Undervoltage lockout
Internal recharge FET for bootstrap refresh
Internal deadtime of 11µs and 0.8µs
CMOS Schmitt-triggered input logic
Output out of phase with input
Reset input
Split pull-up and pull-down gate drive pins
Also available LEAD-FREE (PbF)
IO+/-
VOUT
ton/off
400mA @ VBS=7V,
1.5A @ VBS=16V
5-20V
1.0 and 0.3 µs
Description
Package
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
side configuration which operates up to 150 volts.
8-Lead SOIC
Typical Connection
up to 150V
VCC
IN
RESET
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
www.irf.com
VCC
IN
GND
RESET
VB
HOH
HOL
VS
Load
1






IR20153S Datasheet, Funktion
IR20153S & (PbF)
Functional Block Diagram
VCC
RESET
IN
HV
LEVEL
SHIFT
UV
DETECT
PULSE
GEN
LOGIC
DELAYS
UV
DETECT
PULSE
FILTER
RQ
R
S
VB
HOH
HOL
VS
RECHARGE
SWITCH
Lead Definitions and Assignments
Symbol Description
VCC
I IN-
Driver Supply
Driver Control Signal Input
GND
Ground
RESET Driver Enable Signal Input
VS MOSFET Source Connection
HOL MOSFET Gate Low Connection
HOH MOSFET Gate High Connection
VB Driver Output Stage Supply
6
1 VCC
2 IN-
3 GND
4 RESET-
VB
HOH
HOL
VS
8
7
6
5
8-Lead SOIC
www.irf.com

6 Page









IR20153S pdf, datenblatt
IR20153S & (PbF)
320
280
240
200
-50
0 50 100
Temperature (oC)
150
Figure 12. Turn-off Propagation Delay
vs. Tem perature, VBS=7V
1300
1200
1100
1000
900
800
-50
0 50 100
Temperature (oC)
150
Figure 13. RES-to-Output Turn-on Propagation
Delay vs. Tem perature, VBS=7V
350
300
250
200
150
100
50
-50
0 50 100
Temperature (oC)
150
Figure 14. RES-to-Output Turn-off Propagation
Delay vs. Tem perature, VBS=7V
12
200
175
150
125
100
75
50
-50
0 50 100
Temperature (oC)
150
Figure 15. High Logic Level Input Resistance
vs. Tem perature, VBS=7V
www.irf.com

12 Page





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