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IR2010S Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IR2010S
Beschreibung HIGH AND LOW SIDE DRIVER
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 16 Seiten
IR2010S Datasheet, Funktion
Data Sheet No. PD60195-D
IR2010(S) & (PbF)
Features
HIGH AND LOW SIDE DRIVER
Floating channel designed for bootstrap operation Product Summary
Fully operational to 200V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
VOFFSET
IO+/-
200V max.
3.0A / 3.0A typ.
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Shut down input turns off both channels
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE
VOUT
ton/off
Delay Matching
10 - 20V
95 & 65 ns typ.
15 ns max.
Applications
Audio Class D amplifiers
High power DC-DC SMPS converters
Other high frequency applications
Description
The IR2010 is a high power, high voltage, high speed power MOSFET and IGBT
drivers with independent high and low side referenced output channels, ideal for Audio
Class D and DC-DC converter applications. Logic inputs are compatible with standard
CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. Propagation de-
lays are matched to simplify use in high frequency applications. The floating channel
can be used to drive an N-channel power MOSFET or IGBT in the high side configura-
tion which operates up to 200 volts. Proprietary HVIC and latch immune CMOS tech-
nologies enable ruggedized monolithic construction.
Packages
14-Lead PDIP
16-Lead SOIC
Typical Connection
200V
HO
VDD
VDD
VB
HIN HIN VS
SD SD
LIN LIN VCC
VSS VSS COM
VCC LO
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
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1






IR2010S Datasheet, Funktion
IR2010(S) & (PbF)
250
200 m ax
150
typ
100
50
0
-50
-25
0
25 50 75 100
Temperature (C)
Figure 7A. Turn-on Time vs. Temperature
125
300
250
200
m ax
150
100
typ
50
0
0 2 4 6 8 10 12 14 16 18
VDD Supply Voltage (V)
Figure 7C. Turn-on Time vs VDD Voltage
20
250
200
150
m ax
100
50 typ
0
10 12 14 16 18 20
VCC/VBS Supply Voltage (V)
Figure 8B. Turn-off Time vs. VCC/VBS Voltage
6
250
200
m ax
150
100
typ
50
0
10 12 14 16 18
VCC/VBS Supply Voltage (V)
Figure 7B. Turn-on Time vs. VCC/VBS Voltage
20
250
200
max
150
100
typ
50
0
-50 -25
0 25 50 75
Temperature (C)
100
Figure 8A. Turn-off Time vs. Temperature
125
300
250
200
150
max
100
50 typ
0
0 2 4 6 8 10 12 14 16 18 20
Vdd Supply Voltage (V)
Figure 8C. Turn-off Time vs. VDD Voltage
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6 Page









IR2010S pdf, datenblatt
IR2010(S) & (PbF)
11.0
10.0
Max.
9.0
Typ.
8.0
7.0 Min.
6.0
-50
-25
0 25 50 75
Temperature (°C)
100 125
Figure 25. VCC Undervoltage (-) vs. Temperature
5.0
4.0
3.0
typ
2.0
min
1.0
0.0
10 12 14 16 18 20
Vbias Supply Voltage (V)
Figure 26B. Output Source Current vs. VBIAS Voltage
5.0
4.0
3.0
typ
2.0
min
1.0
0.0
10 12 14 16 18 20
Vbias Supply Voltage (V)
Figure 27B. Output Sink Current vs. VBIAS Voltage
12
5.0
4.0
typ
3.0
min
2.0
1.0
0.0
-50
-25
0
25 50 75 100 125
Temperature (C)
Figure 26A. Output Source Current vs. Temperature
5.0
4.0
typ
3.0
min
2.0
1.0
0.0
-50
-25
0
25 50 75 100 125
Temperature (C)
Figure 27A. Output Sink Current vs. Temperature
1 5 0 .0 0
200V
1 2 5 .0 0
100V
1 0 0 .0 0
7 5 .00
10V
5 0 .00
2 5 .00
0 .0 0
1.E + 0 3
1.E + 0 4
1.E + 0 5
F re q u e n cy (H z)
1.E + 0 6
Figure 28. IR2010 Tj vs Frequency
RGATE = 10 Ohm, Vcc = 15V with IRFPE50
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