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SB10-18K Schematic ( PDF Datasheet ) - Sanyo Semicon Device

Teilenummer SB10-18K
Beschreibung 180V/ 1A Rectifier
Hersteller Sanyo Semicon Device
Logo Sanyo Semicon Device Logo 




Gesamt 3 Seiten
SB10-18K Datasheet, Funktion
Ordering number:EN2835B
SB10-18K
Schottky Barrier Diode (Twin Type · Cathode Common)
180V, 1A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF=0.85V max).
· Fast reverse recovery time (trr=35ns max).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1199C
[SB10-18K]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz, resistive load, Tc=112˚C
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Note *: Value per element
Electrical Connection
Symbol
Conditons
VR
VF
IR
trr
Rthj-c
IR=0.5mA, Tj=25˚C,*
IF=0.4A, Tj=25˚C,*
VR=90V, Tj=25˚C,*
IF=2A, Tj=25˚C,*,–dIF/dt=10A/µs
Junction-Case:Smoothed DC
1:Anode
2:Cathode
3:Anode
SANYO:TO-220MF
Ratings
180
190
1
30
–55 to +125
–55 to +125
Unit
V
V
A
A
˚C
˚C
Ratings
min typ
180
max
0.85
0.1
35
5.0
Unit
V
V
mA
ns
˚C/W
1:Anode
2:Cathode
3:Anode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
43098HA (KT)/O318TA, TS No.2835-1/3





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