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PDF SB05W05P Data sheet ( Hoja de datos )
| Número de pieza | SB05W05P | |
| Descripción | 50V / 500mA Rectifier | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:EN3613A
SB05W05P
Schottky Barrier Diode (Twin Type · Cathode Common)
50V, 500mA Rectifier
Applications
· Universal-use rectifier.
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=10ns).
· Low swicthing noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Package Dimensions
unit:mm
1239A
[SB05W05P]
1:Anode
2:Cathode
3:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking : SE
trr Test Circuit
Symbol
Conditions
VR
VF
IR
C
trr
Rth(j-a)1
Rth(j-a)2
IR=200µA
IF=500mA
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
Mounted on a 250mm2×0.8mm ceramic board
Electrical Connection
SANYO:PCP
Ratings
50
55
500
5
–55 to +125
–55 tp +125
Unit
V
V
mA
A
˚C
˚C
Ratings
min typ
50
25
300
110
max
0.55
50
10
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
1:Anode
2:Cathode
3:Anode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/12097GI/N120MH, JK (KOTO) 8-6775 No.3613-1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SB05W05P.PDF ] | |
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