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PDF SB007W03C Data sheet ( Hoja de datos )

Número de pieza SB007W03C
Descripción 30V / 70mA Rectifier
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! SB007W03C Hoja de datos, Descripción, Manual

Ordering number:EN2936A
SB007W03C
Schottky Barrier Diode (Twin Type · Cathode Common)
30V, 70mA Rectifier
Applictions
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliablity due to highly
reliable planar structure.
Package Dimensions
unit:mm
1169A
[SB007W03C]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
50Hz sine wave, 1 cycle
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance (1)
Thermal Resistance (2)
Marking : K
trr Test Circuit
Symbol
Conditions
VR
VF
IR
C
trr
Rth(j-a)1
Rth(j-a)2
IR=20µA
IF=70mA
VR=15V
VR=10V, f=1MHz
IF=IR=10mA, See specified Test Circuit
Mounted on Cu-foild area of
16mm2×0.2mm on glass epoxy board
Electrical Connection
1:Anode
2:Anode
3:Cathode
SANYO:CP
Ratings
30
35
70
2
–55 to +125
–55 to +125
Unit
V
V
mA
A
˚C
˚C
Ratings
min typ
30
3.0
620
430
max
0.55
5
10
Unit
V
V
µA
pF
ns
˚C/W
˚C/W
1:Anode
2:Anode
3:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62098HA (KT)/D1096GI/1269TA, TS No.2936-1/2

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