|
|
Teilenummer | SB0030-01A |
|
Beschreibung | Schottky Barrier Diode | |
Hersteller | Sanyo Semicon Device | |
Logo | ||
Gesamt 3 Seiten Ordering number:EN2191A
SB0030-01A
Schottky Barrier Diode
10V, 30mA Detection Applications
Features
· Glass sleeve structure.
· Detection efficiency : 70%.
· Small size (Half the size of the DO-35 heretofore in
use).
Package Dimensions
unit:mm
1153A
[SB0030-01A]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Reverse Voltage
Average Rectified Current
Junction Temperature
Storage Temperature
Symbol
VR
IO
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Forward Current
Reverse Current
Capacitance
Detection Efficiency
Detection Efficiency Circuit
Symbol
IF VF=1.0V
IR VR=6V
C VR=1V, f=1MHz
η f=40MHz
Conditions
C:Cahode
A:Anode
Ratings
10
30
100
–55 to +100
Unit
V
mA
˚C
˚C
Ratings
min typ
4.5
70
max
70
1.5
Unit
mA
µA
pF
%
Unit (resistance : Ω, capacitance : F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62098HA (KT)/1169TA/O236TA, TS No.2191-1/3
| ||
Seiten | Gesamt 3 Seiten | |
PDF Download | [ SB0030-01A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
SB0030-01A | Schottky Barrier Diode | Sanyo Semicon Device |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |