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PDF SI3012 Data sheet ( Hoja de datos )
| Número de pieza | SI3012 | |
| Descripción | 3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT | |
| Fabricantes | ETC | |
| Logotipo |  |
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Si3035
3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT
Features
Complete DAA includes the following:
! 3.3 V to 5 V Digital/Analog
Power Supplies
! JATE Filter Option
! 86 dB Dynamic Range TX/RX
Paths
! Daisy-Chaining for Up to Eight
Devices
! Integrated Ring Detector
! 3000 V Isolation
! Support for Caller ID
! Low Profile SOIC Packages
! Direct Interface to DSPs
! Integrated Modem Codec
! Compliant with FCC Part 68
! Low-Power Standby Mode
! Proprietary ISOcap™ Technology
! Pin Compatible with Si3034, Si3032
! Optional IIR Digital Filter
Applications
! V.90 Modems
! Voice Mail Systems
! Fax Machines
! Set Top Boxes
Description
The Si3035 is an integrated direct access arrangement (DAA) chipset that
provides a digital, low-cost, solid-state interface to a telephone line.
Available in two 16-pin small outline packages, it eliminates the need for an
analog front end (AFE), an isolation transformer, relays, opto-isolators, and
a 2- to 4-wire hybrid. The Si3035 dramatically reduces the number of
discrete components and cost required to achieve compliance with FCC
Part 68. The Si3035 interfaces directly to standard modem DSPs and
supports all FCC and JATE out-of-band noise requirements. International
support is provided by the pin compatible Si3034.
Functional Block Diagram
Si3021
Si3012
Ordering Information
See page 50.
Pin Assignments
Si3021 (SOIC)
MCLK
FSYNC
SCLK
VD
SDO
SDI
FC/RGDT
RESET
1
2
3
4
5
6
7
8
16 OFHK
15 RGDT/FSD
14 M0
13 VA
12 GND
11 C1A
10 M1
9 AOUT
Si3021 (TSSOP)
SDO
SDI
FC/RGDT
RESET
AOUT
M1
C1A
GND
1
2
3
4
5
6
7
8
16 VD
15 SCLK
14 FSYNC
13 MCLK
12 OFHK
11 RGDT/FSD
10 M0
9 VA
MCLK
SCLK
FSYNC
SDI
SDO
FC/RGT
RGDT/FSD
OFHK
MODE
RESET
AOUT
Digital
Interface
Isolation
Interface
Control
Interface
Out
Hybrid In
Isolation
Interface
DC
Termination
Ring Detect
Off-Hook
TX
RX
HYBD
VREG2
VREG
DCT
REXT
IGND
RNG1
RNG2
QB
QE
Si3012 (SOIC or TSSOP)
TSTA
TSTB
IGND
C1B
RNG1
RNG2
QB
QE
1
2
3
4
5
6
7
8
16 TX
15 NC
14 RX
13 REXT
12 DCT
11 HYBD
10 VREG2
9 VREG
US Patent # 5,870,046
US Patent # 6,061,009
Other Patents Pending
Rev. 1.2 12/00
Copyright © 2000 by Silicon Laboratories
Si3035-DS12
1 page  
Si3035
Table 3. DC Characteristics, VD = +5 V
(VA = +5 V ±5%, VD = +5 V ±5%, TA = 0 to 70°C for K-Grade)
Parameter
Symbol
Test Condition
Min Typ Max
High Level Input Voltage
VIH
3.5 —
—
Low Level Input Voltage
VIL
— — 0.8
High Level Output Voltage
VOH
IO = –2 mA
3.5 —
—
Low Level Output Voltage
VOL IO = 2 mA — — 0.4
Input Leakage Current
IL
–10 —
10
Power Supply Current, Analog
IA
VA pin
— 0.3
1
Power Supply Current, Digital1
ID
VD pin
— 14 18
Total Supply Current, Sleep Mode1
IA + ID
PDN = 1, PDL = 0
—
1.3
2.5
Total Supply Current, Deep Sleep1,2
IA + ID
PDN = 1, PDL = 1
—
0.04
0.5
Notes:
1. All inputs at 0.4 or VD – 0.4 (CMOS levels). All inputs held static except clock and all outputs unloaded
(Static IOUT = 0 mA).
2. RGDT is not functional in this state.
Unit
V
V
V
V
µA
mA
mA
mA
mA
Table 4. DC Characteristics, VD = +3.3 V
(VA = Charge Pump, VD = +3.3 V ± 0.3 V, TA = 0 to 70°C for K-Grade)
Parameter
Symbol
Test Condition
Min Typ Max Unit
High Level Input Voltage
VIH
2.0 —
—
V
Low Level Input Voltage
VIL
— — 0.8 V
High Level Output Voltage
VOH
IO = –2 mA
2.4 —
—
V
Low Level Output Voltage
VOL IO = 2 mA — — 0.35 V
Input Leakage Current
Power Supply Current, Analog1,2
Power Supply Current, Digital3
Total Supply Current, Sleep Mode3
Total Supply Current, Deep Sleep3,4
Power Supply Voltage, Analog1,5
IL
IA
ID
IA + ID
IA + ID
VA
VA pin
VD pin
PDN = 1, PDL = 0
PDN = 1, PDL = 1
Charge Pump On
–10 —
10
— 0.3
1
— 9 12
— 1.2 2.5
— 0.04 0.5
4.3 4.6 5.00
µA
mA
mA
mA
V
Notes:
1. Only a decoupling capacitor should be connected to VA when the charge pump is on.
2. There is no IA current consumption when the internal charge pump is enabled and only a decoupling cap is connected
to the VA pin.
3. All inputs at 0.4 or VD – 0.4 (CMOS levels). All inputs held static except clock and all outputs unloaded
(Static IOUT = 0 mA).
4. RGDT is not functional in this state.
5. The charge pump is recommended to be used only when VD < 4.5 V. When the charge pump is not used, VA should be
applied to the device before VD is applied on power up if driven from separate supplies.
Rev. 1.2
5
5 Page 
Si3035
Table 11. Digital FIR Filter Characteristics—Transmit and Receive
(VA = Charge Pump, VD = +5 V ±5%, Sample Rate = 8 kHz, TA = 0 to 70°C for K-Grade)
Parameter
Symbol
Min
Typ
Passband (0.1 dB)
Passband (3 dB)
Passband Ripple Peak-to-Peak
F(0.1 dB)
F(3 dB)
0
0
–0.1
—
—
—
Stopband
— 4.4
Stopband Attenuation
–74 —
Group Delay
tgd — 12/Fs
Note: Typical FIR filter characteristics for Fs = 8000 Hz are shown in Figures 6, 7, 8, and 9.
Max
3.3
3.6
0.1
—
—
—
Unit
kHz
kHz
dB
kHz
dB
sec
Table 12. Digital IIR Filter Characteristics—Transmit and Receive
(VA = Charge Pump, VD = +5 V ±5%, Sample Rate = 8 kHz, TA = 0 to 70°C for K-Grade)
Parameter
Symbol
Min
Typ
Max
Unit
Passband (3 dB)
F(3 dB)
0
— 3.6 kHz
Passband Ripple Peak-to-Peak
–0.2 —
0.2 dB
Stopband
— 4.4 — kHz
Stopband Attenuation
–40 — — dB
Group Delay
tgd
— 1.6/Fs —
sec
Note: Typical IIR filter characteristics for Fs = 8000 Hz are shown in Figures 10, 11, 12, and 13. Figures 14 and 15 show
group delay versus input frequency.
Rev. 1.2
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet SI3012.PDF ] | |
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