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PDF Si2301BD Data sheet ( Hoja de datos )
| Número de pieza | Si2301BD | |
| Descripción | P-Channel 2.5-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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P-Channel 2.5-V (G-S) MOSFET
Si2301BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.100 @ VGS = - 4.5 V
- 20 0.150 @ VGS = - 2.5 V
ID (A)b
- 2.4
- 2.0
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2301 BDS (L1)*
*Marking Code
Ordering Information: Si2301BDS-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 2.4
- 1.9
- 0.72
0.9
0.57
- 20
"8
- 10
- 55 to 150
- 2.2
- 1.8
- 0.6
0.7
0.45
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
RthJA
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72066
S-31990—Rev. B, 13-Oct-03
Typical
120
140
Maximum
145
175
Unit
_C/W
www.vishay.com
1
1 page  
Si2301BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
62.5_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
1 10 100
600
Document Number: 72066
S-31990—Rev. B, 13-Oct-03
Square Wave Pulse Duration (sec)
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5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet Si2301BD.PDF ] | |
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