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PDF SHF-0186K Data sheet ( Hoja de datos )
| Número de pieza | SHF-0186K | |
| Descripción | DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET | |
| Fabricantes | ETC | |
| Logotipo |  |
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Product Description
Stanford Microdevices’ SHF-0186K is a high performance GaAs
Heterostructure FET housed in a low-cost surface-mount plastic
package. HFET technology improves breakdown voltage while
minimizing Schottky leakage current for higher power added
efficiency and improved linearity.
PPrerelilmimininaaryry
SHF-0186K
DC-3 GHz, 0.5 Watt
AlGaAs/GaAs HFET
Output power at 1dB compression for the SHF-0186K is +28
dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic
range, high intercept point requirements. It is well suited for
use in both analog and digital wireless communication
infrastructure and subscriber equipment including cellular PCS,
CDPD, wireless data, and pagers.
Gain vs. Frequency
40
VDS=8V, IDQ=100mA
30
20
Gmax
10
S21
0
-10
0
2 4 6 8 10
Frequency (GHz)
12
Product Features
• Patented AlGaAs/GaAs Heterostructure FET
Technology
• +28 dBm P1dB Typical
• +40 dBm Output IP3 Typical
• High Drain Efficiency: Up to 46% at Class AB
• 17 dB Gain at 900 MHz (Application circuit)
• 15 dB Gain at 1900 MHz (Application circuit)
Applications
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
• AN-020 Contains detailed application circuits
Symbol
Device Characteristics, T = 25ºC
VDS = 8V, IDQ = 100 mA
GMAX Maximum Available Gain
S21 Insertion Power Gain
S21 Gain
P1dB Output 1 dB compression point
OIP3
IDSS
gm
VP
Vbgs
Vbgd
Rth
Output Third Order Intercept Point
Saturated Drain Current
VDS = 3V, VGS = 0V
Transconductance
VDS = 3V, VGS = 0V
Pinch-Off Voltage
V = 3V, I = 1mA
DS DQ
Gate-to-Source Breakdown Voltage, Igs = 1.2mA
Gate-to-Drain Breakdown Voltage, Igd = 1.2mA
Thermal Resistance (junction to lead)
f = 900 MHz, ZS=ZS*, ZL=ZL*
f = 1960 MHz, ZS=ZS*, ZL=ZL*
f = 900 MHz, ZS=ZL= 50 Ohms
f = 1960 MHz, Z =Z = 50 Ohms
SL
f = 900 MHz, ZS=ZSOPT, ZL=ZLOPT
f = 1960 MHz, ZS=ZSOPT, ZL=ZLOPT
f = 900 MHz, ZS=ZSOPT, ZL=ZLOPT
f = 1960 MHz, ZS=ZSOPT, ZL=ZLOPT
f = 900 MHz, ZS=ZSOPT, ZL=ZLOPT
f = 1960 MHz, Z =Z , Z =Z
S SOPT L LOPT
Units
dB
dB
dB
dBm
dBm
mA
mS
V
V
V
ºC/W
Min.
13.7
-2.7
Typ.
23.4
20.1
18.0
15.2
17.9
14.6
28.0
28.8
40.9
40.4
300
175
-1.9
-20
-20
66
Max.
-1.0
-17
-17
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
1 EDS-101577 Rev A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SHF-0186K.PDF ] | |
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