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PDF SGP15N60 Data sheet ( Hoja de datos )
| Número de pieza | SGP15N60 | |
| Descripción | Fast IGBT in NPT-technology | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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SGP15N60, SGB15N60
SGW15N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1
(TO-263AB)
(TO-247AC)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP15N60
SGB15N60
SGW15N60
VCE IC VCE(sat) Tj Package
600V 15A
2.3V
150°C TO-220AB
TO-263AB
TO-247AC
Ordering Code
Q67040-S4508
Q67041-A4711
Q67040-S4235
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 15 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
600
31
15
62
62
±20
85
Unit
V
A
V
mJ
10
139
-55...+150
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
1 page  
SGP15N60, SGB15N60
SGW15N60
50A
45A
40A
35A
VGE=20V
30A 15V
13V
25A 11V
20A 9V
7V
15A 5V
10A
5A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
50A
45A
40A
35A
VGE=20V
30A 15V
13V
25A 11V
20A 9V
7V
15A 5V
10A
5A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
50A
45A Tj=+25°C
40A -55°C
+150°C
35A
30A
25A
20A
15A
10A
5A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
3.0V
IC = 30A
2.5V
2.0V
IC = 15A
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5 Jul-02
5 Page 
SGP15N60, SGB15N60
SGW15N60
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity Cσ =250pF.
11 Jul-02
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SGP15N60.PDF ] | |
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