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PDF SGF80N60UF Data sheet ( Hoja de datos )
| Número de pieza | SGF80N60UF | |
| Descripción | Ultra-Fast IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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SGF80N60UF
Ultra-Fast IGBT
October 2001
IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 40A
• High Input Impedance
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
C
G
GC E
TTOO--33PPFF
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
SGF80N60UF
600
± 20
80
40
220
110
45
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
1.1
40
Units
V
V
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
SGF80N60UF Rev. A
1 page  
3000
1000
Eoff
100
Eon
10
0
10
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 5Ω
T = 25℃
C
T = 125℃
C
20 30 40 50 60 70 80
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
7.5
Ω
T = 25℃
12 C
9
300 V
6
V = 100 V
CC
200 V
3
0
0 30 60 90 120 150
Gate Charge, Q [ nC ]
g
Fig 14. Gate Charge Characteristics
180
500
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
10
50us
100us
1㎳
DC Operation
1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
10
500
100
10
Safe Operating Area
VGE=20V, TC=100oC
1
1 10 100
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1000
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
Fig 17. Transient Thermal Impedance of IGBT
©2001 Fairchild Semiconductor Corporation
SGF80N60UF Rev. A
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SGF80N60UF.PDF ] | |
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