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Número de pieza | SKB04N60 | |
Descripción | Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SKB04N60 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! SKP04N60
SKB04N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
C
G
E
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SKP04N60
SKB04N60
VCE IC VCE(sat) Tj Package
600V 4A
2.3V
150°C TO-220AB
TO-263AB
Ordering Code
Q67040-S4216
Q67040-S4229
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Value
600
9.4
4.9
19
19
Unit
V
A
10
4
19
±20
10
50
-55...+150
V
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
1 page SKP04N60
SKB04N60
15A 15A
12A
VGE=20V
9A 15V
13V
11V
6A 9V
7V
5V
3A
12A
VGE=20V
9A 15V
13V
11V
6A 9V
7V
5V
3A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
14A
12A Tj=+25°C
-55°C
+150°C
10A
8A
6A
4A
2A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
3.0V
2.5V
IC = 8A
IC = 4A
2.0V
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5 Jul-02
5 Page TO-220AB
TO-263AB (D2Pak)
SKP04N60
SKB04N60
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
T
dimensions
[mm]
min max
9.70 10.30
14.88 15.95
0.65
0.86
3.55
3.89
2.60
3.00
6.00
6.80
13.00 14.00
4.35
4.75
0.38
0.65
0.95
1.32
2.54 typ.
4.30
4.50
1.17
1.40
2.30
2.72
[inch]
min max
0.3819 0.4055
0.5858 0.6280
0.0256 0.0339
0.1398 0.1531
0.1024 0.1181
0.2362 0.2677
0.5118 0.5512
0.1713 0.1870
0.0150 0.0256
0.0374 0.0520
0.1 typ.
0.1693 0.1772
0.0461 0.0551
0.0906 0.1071
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Z
dimensions
[mm]
[inch]
min max min max
9.80 10.20 0.3858 0.4016
0.70 1.30 0.0276 0.0512
1.00 1.60 0.0394 0.0630
1.03 1.07 0.0406 0.0421
2.54 typ.
0.1 typ.
0.65 0.85 0.0256 0.0335
5.08 typ.
0.2 typ.
4.30 4.50 0.1693 0.1772
1.17 1.37 0.0461 0.0539
9.05 9.45 0.3563 0.3720
2.30 2.50 0.0906 0.0984
15 typ.
0.5906 typ.
0.00 0.20 0.0000 0.0079
4.20 5.20 0.1654 0.2047
8° max
8° max
2.40 3.00 0.0945 0.1181
0.40 0.60 0.0157 0.0236
10.80
0.4252
1.15 0.0453
6.23 0.2453
4.60 0.1811
9.40 0.3701
16.15
0.6358
11 Jul-02
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet SKB04N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
SKB04N60 | Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode | Infineon Technologies AG |
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