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Número de pieza | SI9926BDY | |
Descripción | Dual N-Channel 2.5-V (G-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SI9926BDY (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Si9926BDY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.020 at VGS = 4.5 V
0.030 at VGS = 2.5 V
ID (A)
8.2
6.7
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETS
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si9926BDY-T1-E3 (Lead (Pb)-free)
Si9926BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
8.2 6.2
6.5 4.9
Pulsed Drain Current
IDM 30
Continuous Source Current (Diode Conduction)a
IS 1.7 0.95
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0 1.14
1.3 0.72
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
52
90
32
Maximum
62.5
110
40
Unit
°C/W
Document Number: 72278
S09-0870-Rev. C, 18-May-09
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Si9926BDY
Vishay Siliconix
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (s)
1
Normalized Thermal Transient Impedance, Junction-to-Foot
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72278.
Document Number: 72278
S09-0870-Rev. C, 18-May-09
www.vishay.com
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SI9926BDY.PDF ] |
Número de pieza | Descripción | Fabricantes |
SI9926BDY | Dual N-Channel 2.5-V (G-S) MOSFET | Vishay Siliconix |
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