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PDF SI7880DP Data sheet ( Hoja de datos )
| Número de pieza | SI7880DP | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel 30-V (D-S) MOSFET
Si7880DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.003 @ VGS = 10 V
0.00425 @ VGS = 4.5 V
ID (A)
29
25
PowerPAKt SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
D New Low Thermal Resistance PowerPAKt Package with
Low 1.07-mm Profile
APPLICATIONS
D DC/DC Converters
- Low-Side MOSFET in Synchronous Buck in Desktops
D Secondary Synchronous Rectifier
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Avalanche Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
IS
PD
TJ, Tstg
30
"20
29 18
25 14
60
50
4.5 1.6
5.4 1.9
3.4 1.2
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71875
S-03768—Rev. B, 21-Apr-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si7880DP
Vishay Siliconix
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
Single Pulse
0.05 0.02
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71875
S-03768—Rev. B, 21-Apr-03
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI7880DP.PDF ] | |
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