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K9F1G08U0M-FCB0 Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K9F1G08U0M-FCB0
Beschreibung 1Gb Gb 1.8V NAND Flash Errata
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 38 Seiten
K9F1G08U0M-FCB0 Datasheet, Funktion
ELECTRONICS
March. 2003
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
1Gb 1.8V NAND Flash Errata
Description : Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table
Affected Products : K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0
K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0
Improvement schedule : The components targeted to meet the specification
is scheduled to be available by workweek 25 along
with the final specification values.
Workaround : Relax the relevant timing parameters according to the table.
Table
Parameters
tWC
Specification
45
Relaxed Condition 80
tWH
15
20
tWP
25
60
UNIT : ns
tRC tREH tRP tREA tCEA
50 15 25 30 45
80 20 60 60 75
Sincerely,
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
1






K9F1G08U0M-FCB0 Datasheet, Funktion
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F1G08U0M-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 N.C
47 N.C
46 DNU
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 DNU
38 N.C
37 Vcc
36 Vss
35 N.C
34 DNU
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 DNU
26 N.C
25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
15.40±0.10
0.70 MAX
0.58±0.04
#1 #48
#24 #25
(0.1Min)
17.00±0.20
5
0.45~0.75
SAMSUNG

6 Page









K9F1G08U0M-FCB0 pdf, datenblatt
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
FLASH MEMORY
VALID BLOCK
Parameter
Valid Block Number
Symbol
NVB
Min
1004
Typ.
-
Max
1024
Unit
Blocks
NOTE :
1. The K9F1GXXX0M may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block and does not require Error Correction.
AC TEST CONDITION
(K9F1GXXX0M-XCB0 :TA=0 to 70°C, K9F1GXXX0M-XIB0:TA=-40 to 85°C
K9F1GXXQ0M : Vcc=1.70V~1.95V, K9F1GXXU0M : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F1GXXQ0M
Input Pulse Levels
0V to Vcc
Input Rise and Fall Times
5ns
Input and Output Timing Levels
Vcc/2
K9F1GXXQ0M:Output Load (Vcc:1.8V +/-10%)
K9F1GXXU0M:Output Load (Vcc:3.0V +/-10%)
1 TTL GATE and CL=30pF
K9F1GXXU0M:Output Load (Vcc:3.3V +/-10%)
-
K9F1GXXU0M
0.4V to 2.4V
5ns
1.5V
1 TTL GATE and CL=50pF
1 TTL GATE and CL=100pF
CAPACITANCE(TA=25°C, VCC=1.8V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
CI/O
VIL=0V
-
10 pF
Input Capacitance
CIN VIN=0V
-
10 pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
WE
RE
WP PRE
Mode
HL L
LHL
HXX
Command Input
Read Mode
HXX
Address Input(4clock)
HL L
LHL
HHX
Command Input
Write Mode
HHX
Address Input(4clock)
LLL
H H X Data Input
L L LH
X X Data Output
X X X X H X X During Read(Busy)
X X X X X H X During Program(Busy)
X X X X X H X During Erase(Busy)
X X(1) X X X L X Write Protect
X X H X X 0V/VCC(2) 0V/VCC(2) Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP and PRE should be biased to CMOS high or CMOS low for standby.
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
tPROG
-
300 700
µs
Dummy Busy Time for Cache Program
tCBSY
3 700 µs
Number of Partial Program Cycles
in the Same Page
Main Array
Spare Array
Nop
-
-
-
-
4 cycles
4 cycles
Block Erase Time
tBERS
-
2
3 ms
NOTE : 1. Max. time of tCBSY depends on timing between internal program completion and data in
SAMSUNG
11

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