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K9F1608W0A- Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K9F1608W0A-
Beschreibung 2M x 8 Bit NAND Flash Memory
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 25 Seiten
K9F1608W0A- Datasheet, Funktion
www.DataSheet4U.com
K9F1608W0A-TCB0, K9F1608W0A-TIB0
Document Title
2M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
1.0 Data Sheet 1998.
1.1 Data Sheet 1999.
1) Added CE dont’ care mode during the data-loading and reading
1.2 1) Revised real-time map-out algorithm(refer to technical notes)
1.3 Changed device name
- KM29W16000AT -> K9F1608W0A-TCB0
- KM29W16000AIT -> K9F1608W0A-TIB0
FLASH MEMORY
Draft Date
April 10th 1998
July 14th 1998
April 10th 1999
Remark
Preliminary
Final
Final
July 23th 1999
Sep.15th 1999
Final
Final
DataSheet4U.com
DataShee
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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K9F1608W0A- Datasheet, Funktion
www.DataSheet4U.com
K9F1608W0A-TCB0, K9F1608W0A-TIB0
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
K9F1608W0A-TCB0
K9F1608W0A-TIB0
Storage Temperature
Short Circuit Output Current
Symbol
VIN
TBIAS
TSTG
IOS
Rating
-0.6 to +7.0
-10 to +125
-40 to +125
-65 to +150
5
Unit
V
°C
°C
mA
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCCQ+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
et4U.com
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1608W0A-TCB0:TA=0 to 70°C, K9F1608W0A-TIB0:TA=-40 to 85°C)
Parameter
Supply Voltage
Supply Voltage
Supply Voltage
Symbol
VCC
VCCQ1)
VSS
Min
2.7
2.7
0
Typ.
-
-
0
Max
5.5
5.5
0
NOTE : 1. Vcc and VccQ pins are separater each other.
Unit
V
V
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Sequential Read
Operating
Current Program
Erase
Symbol
Vcc=2.7V ~ 3.6V
Test Conditions
DataSheet4U.cMoimn Typ Max
ICC1
tcycle=80ns, CE=VIL,
IOUT=0mA
- 10
20
ICC2
-
- 10
20
ICC3
-
- 10
20
Vcc=3.6V ~ 5.5V
Min Typ Max
- 15
30
- 15
- 25
30
40
Unit
mA
Stand-by Current(TTL)
ISB1 CE=VIH, WP=0V/VCC
--
1 --
1
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
ISB2 CE=VCC-0.2, WP=0V/VCC - 5 50 - 5 50
ILI VIN=0 to 5.5V
--
±10 - -
±10 µA
ILO VOUT=0 to 5.5V
--
±10 - -
±10
Input High Voltage
I/O Pins
VIH
Except I/O Pins
2.0 - VCCQ+0.3 3.0 - VCCQ+0.5
2.0 - VCC+0.3 3.0 - VCC+0.5
Input Low Voltage, All inputs
VIL
-
-0.3 -
0.6 -0.3 -
0.8 V
Output High Voltage Level
Output Low Voltage Level
VOH IOH=-400µA
VOL IOL=2.1mA
2.4 -
--
- 2.4 -
0.4 - -
-
0.4
Output Low Current(R/B)
IOL(R/B) VOL=0.4V
8 10 - 8 10 - mA
DataShee
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K9F1608W0A- pdf, datenblatt
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K9F1608W0A-TCB0, K9F1608W0A-TIB0
FLASH MEMORY
System Interface Using CE don’t-care.
For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
256byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Figure 3. Program Operation with CE don’t-care.
CLE
CE
CE dont’-care
WE
ALE
I/O0~7
CE
80H Start Add.(3Cycle)
tCS tCH
Data Input
CE
(Max. 55ns)
tCEA
Data Input
10H
et4U.com
WE
tREA
tWP RE
DataSheet4U.com
I/O0~7
out
DataShee
Figure 4. Read Operation with CE don’t-care.
Timing requirements : If CE is is exerted high during sequential
data-reading, the falling edge of CE to valid data(tCEA) must
be kept greater than 55ns.
CLE
CE
CE dont’-care
RE
ALE
R/B
WE
I/O0~7
tR
00H Start Add.(3Cycle)
Data Output(sequential)
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