|
|
Número de pieza | K9F1208U0M- | |
Descripción | 64M x 8 Bit NAND Flash Memory | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K9F1208U0M- (archivo pdf) en la parte inferior de esta página. Total 45 Páginas | ||
No Preview Available ! K9F1208Q0B
K9F1208D0B
K9F1208U0B
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
Advance
FLASH MEMORY
Draft Date
Apr. 24th 2004
Remark
Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
1 page Package Dimensions
63-Ball FBGA (measured in millimeters)
FLASH MEMORY
Top View
8.50±0.10
#A1
(Datum A)
Bottom View
#A1 INDEX MARK(OPTIONAL)
8.50±0.10
0.80 x 9= 7.20
0.80 x 5= 4.00
0.80
654321
A
B
A
B
(Datum B) C
D
E
F
G
H
63-∅0.45±0.05
∅ 0.20 M A B
0.10MAX
Side View
13.00±0.10
2.00
0.45±0.05
5
5 Page K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Voltage on any pin relative to VSS
K9F1208X0B-XCB0
Temperature Under Bias
K9F1208X0B-XIB0
Storage Temperature
K9F1208X0B-XCB0
K9F1208X0B-XIB0
Short Circuit Current
VIN/OUT
VCC
VCCQ
TBIAS
TSTG
Ios
Rating
1.8V DEVICE
3.3V/2.65V DEVICE
-0.6 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-0.2 to + 2.45
-0.6 to + 4.6
-10 to +125
-40 to +125
-65 to +150
5
Unit
V
°C
°C
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1208X0B-XCB0 :TA=0 to 70°C, K9F1208X0B-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F1208Q0B(1.8V)
Min Typ. Max
K9F1208D0B(2.65V)
Min Typ. Max
K9F1208U0B(3.3V)
Min Typ. Max
Supply Voltage VCC 1.70 1.8 1.95 2.4 2.65 2.9 2.7 3.3 3.6
Supply Voltage
VCCQ
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
Supply Voltage
VSS
0
0
0
0
0
0
0
0
0
Unit
V
V
V
11
11 Page |
Páginas | Total 45 Páginas | |
PDF Descargar | [ Datasheet K9F1208U0M-.PDF ] |
Número de pieza | Descripción | Fabricantes |
K9F1208U0M- | 64M x 8 Bit NAND Flash Memory | Samsung semiconductor |
K9F1208U0M-YCB0 | 64M x 8 Bit NAND Flash Memory | Samsung semiconductor |
K9F1208U0M-YIB0 | 64M x 8 Bit NAND Flash Memory | Samsung semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |