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Teilenummer | K9F1208Q0B-P |
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Beschreibung | 64M x 8 Bit NAND Flash Memory | |
Hersteller | Samsung semiconductor | |
Logo | ||
Gesamt 45 Seiten K9F1208Q0B
K9F1208D0B
K9F1208U0B
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 Initial issue.
Advance
FLASH MEMORY
Draft Date
Apr. 24th 2004
Remark
Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F1208U0B-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 N.C
47 N.C
46 DNU
45 N.C
44 I/O7
43 I/O6
42 I/O5
41 I/O4
40 N.C
39 DNU
38 N.C
37 Vcc
36 Vss
35 N.C
34 DNU
33 N.C
32 I/O3
31 I/O2
30 I/O1
29 I/O0
28 N.C
27 DNU
26 N.C
25 N.C
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
15.40±0.10
0.70 MAX
0.58±0.04
#1 #48
#24 #25
(0.01Min)
17.00±0.20
6
0.45~0.75
6 Page K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol Test Conditions
Operating Sequential Read
ICC1
tRC=50ns, CE=VIL
IOUT=0mA
Current Program
ICC2
-
Erase
ICC3
-
Stand-by Current(TTL)
ISB1 CE=VIH, WP=0V/VCC
Stand-by Current(CMOS) ISB2 CE=VCC-0.2, WP=0V/VCC
Input Leakage Current
ILI VIN=0 to Vcc(max)
Output Leakage Current
ILO VOUT=0 to Vcc(max)
1.8V
Min Typ Max
- 8 15
- 8 15
- 8 15
- -1
- 10 50
- - ±10
- - ±10
K9F1208X0B
2.65V
3.3V
Min Typ Max Min Typ Max
- 10 20 - 10 20
- 10 20 - 10 20
- 10 20 - 10 20
- -1 - -1
- 10 50 - 10 50
- - ±10 - - ±10
- - ±10 - - ±10
Unit
mA
µA
Input High Voltage
I/O pins
VIH*
Except I/O pins
VCCQ
VCCQ VCCQ
VCCQ
- - 2.0
-0.4
+0.3 -0.4
+0.3
VCC
VCC VCC
VCC
- - 2.0
-0.4
+0.3 -0.4
+0.3
VCCQ
-
+0.3
VCC
-
+0.3
Input Low Voltage, All
inputs
VIL*
- -0.3 - 0.4 -0.3 - 0.5 -0.3 - 0.8
V
K9F1208Q0B :IOH=-100µA
VCCQ
Output High Voltage Level VOH K9F1208D0B :IOH=-100µA
-
VCCQ
--
- 2.4 -
-
-0.1 -0.4
K9F1208U0B :IOH=-400µA
Output Low Voltage Level
K9F1208Q0B :IOL=100uA
VOL K9F1208D0B :IOL=100µA
K9F1208U0B :IOL=2.1mA
-
- 0.1 -
- 0.4 -
- 0.4
K9F1208Q0B :VOL=0.1V
Output Low Current(R/B) IOL(R/B) K9F1208D0B :VOL=0.1V 3 4 - 3 4 - 8 10 - mA
K9F1208U0B :VOL=0.4V
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
12
12 Page | ||
Seiten | Gesamt 45 Seiten | |
PDF Download | [ K9F1208Q0B-P Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
K9F1208Q0B-D | 64M x 8 Bit NAND Flash Memory | Samsung semiconductor |
K9F1208Q0B-F | 64M x 8 Bit NAND Flash Memory | Samsung semiconductor |
K9F1208Q0B-H | 64M x 8 Bit NAND Flash Memory | Samsung semiconductor |
K9F1208Q0B-P | 64M x 8 Bit NAND Flash Memory | Samsung semiconductor |
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