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K6F8016U6 Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K6F8016U6
Beschreibung 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 9 Seiten
K6F8016U6 Datasheet, Funktion
K6F8016U6B Family
CMOS SRAM
Document Title
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
1.0 Finalize
- ICC2 change : 30mA to 28mA for 55ns product
25mA to 22mA for 70ns product
Draft Date
July 24, 2001
Remark
Preliminary
September 27, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2001






K6F8016U6 Datasheet, Funktion
K6F8016U6B Family
CMOS SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH, UB or/and LB=VIL)
Address
Data Out
tOH
Previous Data Valid
tAA
tRC
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS1
tAA
tCO
tRC
tOH
CS2
UB, LB
OE
Data out
High-Z
tBA
tOE
tOLZ
tBLZ
tLZ
Data Valid
tHZ
tBHZ
tOHZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6 Revision 1.0
September 2001

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