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K6F2008V2E-LF70 Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K6F2008V2E-LF70
Beschreibung 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 9 Seiten
K6F2008V2E-LF70 Datasheet, Funktion
K6F2008V2E Family
CMOS SRAM
Document Title
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
Draft Date
July 19 , 2001
Remark
Preliminary
1.0 Finalize
September 27, 2001 Final
1.1 Revised
May 13, 2003
- Added Lead Free(LF) product for 32-TSOP1-0813.4F(LF) package.
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.1
May 2003






K6F2008V2E-LF70 Datasheet, Funktion
K6F2008V2E Family
CMOS SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, WE=VIH)
Address
Data Out
tOH
Previous Data Valid
tAA
tRC
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS1
tAA
tCO1
tRC
CS2
OE
Data out
High-Z
tCO2
tOE
tOLZ
tLZ
tOH
tHZ(1,2)
Data Valid
tOHZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6 Revision 1.1
May 2003

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