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K6F1008V2C-YF55 Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K6F1008V2C-YF55
Beschreibung 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 9 Seiten
K6F1008V2C-YF55 Datasheet, Funktion
K6F1008V2C Family
Document Title
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
0.1 Revise
- Changed Package Type
: 48(36)-TBGA-6.00x7.00 to 32-TSOP1-0813.4F
1.0 Finalize
Draft Data
November 27, 2001
December 13, 2001
Remark
Preliminary
Preliminary
June 12, 2002
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
June 2002






K6F1008V2C-YF55 Datasheet, Funktion
K6F1008V2C Family
CMOS SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH)
Address
Data Out
tOH
Previous Data Valid
tAA
tRC
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS1
tAA
tCO1
tRC
CS2
OE
Data out
High-Z
tCO2
tOE
tOLZ
tLZ
tOH
tHZ(1,2)
Data Valid
tOHZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
6 Revision 1.0
June 2002

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