Datenblatt-pdf.com


K5A3240YBC-T855 Schematic ( PDF Datasheet ) - Samsung semiconductor

Teilenummer K5A3240YBC-T855
Beschreibung Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
Hersteller Samsung semiconductor
Logo Samsung semiconductor Logo 




Gesamt 45 Seiten
K5A3240YBC-T855 Datasheet, Funktion
K5A3x40YT(B)C
Preliminary
MCP MEMORY
Document Title
Multi-Chip Package MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
Remark
November 6, 2002 Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.0
November 2002






K5A3240YBC-T855 Datasheet, Funktion
K5A3x40YT(B)C
Preliminary
MCP MEMORY
Table 3. Flash Memory Bottom Boot Block Address (K5A3240YB/K5A3340YB)
K5
A3240
YB
K5 Block Address
A3340 Block
YB A20 A19 A18 A17 A16 A15 A14 A13 A12
BA70 1 1 1 1 1 1 X X X
BA69 1 1 1 1 1 0 X X X
BA68 1 1 1 1 0 1 X X X
Block Size
(KB/KW)
64/32
64/32
64/32
Address Range
Byte Mode
Word Mode
3F0000H-3FFFFFH
3E0000H-3EFFFFH
3D0000H-3DFFFFH
1F8000H-1FFFFFH
1F0000H-1F7FFFH
1E8000H-1EFFFFH
BA67 1 1 1 1 0 0 X X X
BA66 1 1 1 0 1 1 X X X
BA65 1 1 1 0 1 0 X X X
64/32
64/32
64/32
3C0000H-3CFFFFH
3B0000H-3BFFFFH
3A0000H-3AFFFFH
1E0000H-1E7FFFH
1D8000H-1DFFFFH
1D0000H-1D7FFFH
BA64 1 1 1 0 0 1 X X X
BA63 1 1 1 0 0 0 X X X
BA62 1 1 0 1 1 1 X X X
64/32
64/32
64/32
390000H-39FFFFH
380000H-38FFFFH
370000H-37FFFFH
1C8000H-1CFFFFH
1C0000H-1C7FFFH
1B8000H-1BFFFFH
BA61 1 1 0 1 1 0 X X X
BA60 1 1 0 1 0 1 X X X
BA59 1 1 0 1 0 0 X X X
64/32
64/32
64/32
360000H-36FFFFH
350000H-35FFFFH
340000H-34FFFFH
1B0000H-1B7FFFH
1A8000H-1AFFFFH
1A0000H-1A7FFFH
BA58 1 1 0 0 1 1 X X X
BA57 1 1 0 0 1 0 X X X
BA56 1 1 0 0 0 1 X X X
64/32
64/32
64/32
330000H-33FFFFH
320000H-32FFFFH
310000H-31FFFFH
198000H-19FFFFH
190000H-197FFFH
188000H-18FFFFH
BA55 1 1 0 0 0 0 X X X
BA54 1 0 1 1 1 1 X X X
BA53 1 0 1 1 1 0 X X X
Bank2 Bank2 BA52 1 0 1 1 0 1 X X X
BA51 1 0 1 1 0 0 X X X
64/32
64/32
64/32
64/32
64/32
300000H-30FFFFH
2F0000H-2F1FFFH
2E0000H-2EFFFFH
2D0000H-2DFFFFH
2C0000H-2CFFFFH
180000H-187FFFH
178000H-17FFFFH
170000H-177FFFH
168000H-16FFFFH
160000H-167FFFH
BA50 1 0 1 0 1 1 X X X
BA49 1 0 1 0 1 0 X X X
BA48 1 0 1 0 0 1 X X X
64/32
64/32
64/32
2B0000H-2BFFFFH
2A0000H-2AFFFFH
290000H-29FFFFH
158000H-15FFFFH
150000H-157FFFH
148000H-14FFFFH
BA47 1 0 1 0 0 0 X X X
BA46 1 0 0 1 1 1 X X X
BA45 1 0 0 1 1 0 X X X
64/32
64/32
64/32
280000H-28FFFFH
270000H-27FFFFH
260000H-26FFFFH
140000H-147FFFH
138000H-13FFFFH
130000H-137FFFH
BA44 1 0 0 1 0 1 X X X
BA43 1 0 0 1 0 0 X X X
64/32
64/32
250000H-25FFFFH
240000H-24FFFFH
128000H-12FFFFH
120000H-127FFFH
BA42 1 0 0 0 1 1 X X X
64/32
230000H-23FFFFH 118000H-11FFFFH
BA41 1 0 0 0 1 0 X X X
64/32
220000H-22FFFFH 110000H-117FFFH
BA40 1 0 0 0 0 1 X X X
64/32
210000H-21FFFFH 108000H-10FFFFH
BA39 1 0 0 0 0 0 X X X
64/32
200000H-20FFFFH 100000H-107FFFH
BA38 0 1 1 1 1 1 X X X
64/32
1F0000H-1FFFFFH 0F8000H-0FFFFFH
BA37 0 1 1 1 1 0 X X X
64/32
1E0000H-1EFFFFH 0F0000H-0F7FFFH
BA36 0 1 1 1 0 1 X X X
64/32
1D0000H-1DFFFFH 0E8000H-0EFFFFH
BA35 0 1 1 1 0 0 X X X
64/32
1C0000H-1CFFFFH 0E0000H-0E7FFFH
- 6 - Revision 0.0
November 2002

6 Page









K5A3240YBC-T855 pdf, datenblatt
K5A3x40YT(B)C
Preliminary
MCP MEMORY
WE
A20A0(x16)/*
A20A-1(x8)
DQ15DQ0
555H/
AAAH
2AAH/
555H
555H/
AAAH
00H/
00H
01H/
02H
AAH
55H
90H
ECH
22oAr0H
22A2H
F0H
Manufacturer
Code
Device Code
(K5A3240Y)
Return to
Read Mode
NOTE: The 3rd Cycle and 4th Cycle address must include the same bank address. Please refer to Table 6 for device code.
Figure 3. Autoselect Operation
Write (Program/Erase) Mode
Flash memory executes its program/erase operations by writing commands into the command register. In order to write the com-
mands to the register, CEF and WE must be low and OE must be high. Addresses are latched on the falling edge of CEF or WE
(whichever occurs last) and the data are latched on the rising edge of CEF or WE (whichever occurs first). The device uses standard
microprocessor write timing.
Program
Flash memory can be programmed in units of a word or a byte. Programming is writing 0's into the memory array by executing the
Internal Program Routine. In order to perform the Internal Program Routine, a four-cycle command sequence is necessary. The first
two cycles are unlock cycles. The third cycle is assigned for the program setup command. In the last cycle, the address of the mem-
ory location and the data to be programmed at that location are written. The device automatically generates adequate program
pulses and verifies the programmed cell margin by the Internal Program Routine. During the execution of the Routine, the system is
not required to provide further controls or timings.
During the Internal Program Routine, commands written to the device will be ignored. Note that a hardware reset during a program
operation will cause data corruption at the corresponding location.
WE
A20A0(x16)/
A20A-1(x8)
DQ15-DQ0
RY/BY
555H/
AAAH
2AAH/
555H
555H/
AAAH
AAH
55H
Program
Address
A0H
Program
Data
Program
Start
Figure 4. Program Command Sequence
- 12 -
Revision 0.0
November 2002

12 Page





SeitenGesamt 45 Seiten
PDF Download[ K5A3240YBC-T855 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
K5A3240YBC-T855Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAMSamsung semiconductor
Samsung semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche