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Número de pieza | K4S281632C-TP1H | |
Descripción | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K4S281632C-TP1H (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! K4S281632C-TI(P)
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.1
June 2001
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Jun. 2001
1 page K4S281632C-TI(P)
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VI N, VOUT
VDD , VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Unit
V
V
°C
W
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -40 to 85 °C )
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
VD D, VDDQ
VI H
VIL
VO H
VOL
IL I
Min
3.0
2.0
-0.3
2.4
-
-10
Typ Max Unit
3.3 3.6
V
3.0 VDD +0.3
V
0 0.8 V
- -V
- 0.4 V
- 10 uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Note
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
D Q0 ~ D Q15
Symbol
CCLK
CIN
CADD
COUT
Min
2.5
2.5
2.5
4.0
Notes : 1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
Max
4.0
5.0
5.0
6.5
Unit
pF
pF
pF
pF
Note
1
2
2
3
Rev. 0.1 Jun. 2001
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet K4S281632C-TP1H.PDF ] |
Número de pieza | Descripción | Fabricantes |
K4S281632C-TP1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
K4S281632C-TP1L | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
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