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JDV2S08S Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer JDV2S08S
Beschreibung VCO for UHF Band Radio
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 3 Seiten
JDV2S08S Datasheet, Funktion
TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S08S
VCO for UHF Band Radio
· High Capacitance Ratio: C1V/C4V = 3.0 (typ.)
· Low Series Resistance : rs = 0.35 (typ.)
· This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
150
-55~150
Unit
V
°C
°C
JDV2S08S
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 mA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
¾
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 500 mVrms
JEDEC
JEITA
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Min Typ. Max Unit
10 ¾ ¾
¾¾
3
17.3 18.3 19.3
5.3 6.1 6.6
2.8 3 ¾
¾ 0.35 0.45
V
nA
pF
¾
W
Marking
C
1 2002-01-23





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