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JDV2S01E Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer JDV2S01E
Beschreibung VCO for UHF band
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 4 Seiten
JDV2S01E Datasheet, Funktion
VCO for UHF band
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
· Small Package
· High Capacitance Ratio: C1V/C4V = 2.0 (typ.)
· Low Series Resistance: rs = 0.5 (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
125
-55~125
Unit
V
°C
°C
JDV2S01E
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 mA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
¾
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g
Min Typ. Max Unit
10 ¾ ¾
¾¾
3
2.85 3.15 3.45
1.35 1.57 1.81
1.8 2 ¾
¾ 0.5 0.7
V
nA
pF
¾
W
FA
1 2002-01-16





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