(PDF) KSE350 Datasheet - High Voltage General Purpose Applications

Número de pieza	KSE350
Descripción	High Voltage General Purpose Applications
Fabricantes	Fairchild Semiconductor
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No Preview Available ! KSE350 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to KSE340 1 TO-126 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO ICBO IEBO hFE Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain IC = - 1mA, IB = 0 VCB = - 300V, IE = 0 VBE = - 3V, IC = 0 VCE = - 10V, IC = - 50mA Value - 300 - 300 -5 - 500 20 150 - 65 ~ 150 Units V V V mA W °C °C Min. -300 30 Max. -100 -100 240 Units V µA µA ©2000 Fairchild Semiconductor International Rev. A, February 2000 1 page

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PDF KSE350 Data sheet ( Hoja de datos )