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Teilenummer | KSD1943 |
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Beschreibung | High Power Transistor | |
Hersteller | Fairchild Semiconductor | |
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Gesamt 4 Seiten High Power Transistor
KSD1943
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
80
60
8
3
40
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE
VBE(sat)
VCE(sat)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
IC = 25mA, IB = 0
VCB = 80V, IE = 0
VEB = 8V, IC = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
IC = 2A, IB = 0.05A
Min.
60
400
Max.
100
10
2000
1.5
1
Units
V
µA
µA
V
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ KSD1943 Schematic.PDF ] |
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